(n+/p/p+) Silicon solar cell base thickness optimization under modulated short wavelength illumination, at resonances in both frequency and temperature of minority carriers’ diffusion coefficient
1 International Renewable Energy Research Group (GIRER). BP. 15003, Dakar, Senegal.
2 University Institute of Technology. Iba Der THIAM University of Thiès-Senegal.
3 Assane SECK University, Ziguinchor, Senegal.
4 Polytechnic School of Thiès, BP A10, Thiès, Senegal,
Research Article
International Journal of Engineering Research Updates, 2022, 03(02), 040–052.
Article DOI: 10.53430/ijeru.2022.3.2.0059
Publication history:
Received on 27 September 2022; revised on 28 October 2022; accepted on 31 October 2022
Abstract:
The magneto-transport equation relating to the density of photogenerated minority carriers in the (p) base of the (n+/p/p+) solar cell illuminated by monochromatic light in frequency modulation, is solved. The diffusion coefficient of the minority carriers in the base, placed under temperature and magnetic field variation, passes through a maximum, at the double resonance points, in temperature and at the frequency of the cyclotron. The photocurrent is reproduced as a function of the recombination velocity at the junction, for the maximum values of the diffusion coefficient. The expressions of the minority carriers ’recombination velocity on the rear side are deduced and their graphical representation gives the optimum thickness, specific to a high absorption coefficient, for the maximum values of the diffusion coefficient. The results obtained from the optimum thickness are modelled and analyzed, in favor of a reduction of silicon material, for the development of economical solar cells.
Keywords:
Silicon Solar Cell; Diffusion Coefficient; Resonance-Temperature; Magnetic field; Recombination Velocity; Absorption coefficient; Optimum Base Thickness
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